English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25S128FVT-WE2ROHM Semiconductor |
IC EEPROM 128K SPI 20MHZ 8TSSOP |
|
IS42S32400F-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S-93C46BD0I-I8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ SNT8A |
|
MT29F4G08ABAEAH4-ITS:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
S34ML02G104BHB013Flip Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
RM25C64C-LSNI-BAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8SOIC |
|
93LC86AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI SOT23-6 |
|
M24C16-DRMN8TP/KSTMicroelectronics |
IC EEPROM 16KBIT I2C 1MHZ 8SO |
|
CY62147DV30LL-45BVXIRochester Electronics |
STANDARD SRAM, 256KX16, 45NS |
|
AS4C64M8D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY14V116G7-BZ30XICypress Semiconductor |
NO WARRANTY |
|
IS46R16160F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY14B101P-SFXITRochester Electronics |
IC NVSRAM 1MBIT SPI 40MHZ 16SOIC |
