English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 16Mb (2M x 8, 1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 30ns |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS46R16160F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY14B101P-SFXITRochester Electronics |
IC NVSRAM 1MBIT SPI 40MHZ 16SOIC |
|
71V124SA12PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
IS61LF51236B-7.5B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
71V67603S133BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
DS28EC20+Maxim Integrated |
IC EEPROM 20KBIT 1-WIRE TO92-3 |
|
CYD18S36V18-200BBAXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
R1LP5256ESP-5SI#B1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
S25FL128SDPMFIG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
QS7026A-55JRochester Electronics |
IC SRAM 256KBIT 18MHZ |
|
93AA46CX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
S25FL128SDSMFBG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
71V416YS15PHGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
