类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8 , 64 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128SDSMFBG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
71V416YS15PHGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1041BV33-20VCRochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
CY7C1019BV33-12ZCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
71V67703S80BQRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S25FL128LAGMFA013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
93LC46CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DFN |
|
CAV24C04YE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 8TSSOP |
|
71V3556SA166BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
24LC04BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8TDFN |
|
W9812G2KB-6 TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
UPD44165184BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
S25FL512SDPBHVC10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |