类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 87 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX60LF8G18AC-XKIMacronix |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
71V632S7PFGI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
W632GG8NB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
24LCS21A/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CY62147GN30-45BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
MT29F1G08ABAEAWP-IT:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
IS42S16160G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
DS1230AB-150Rochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
S25FL128SAGMFB000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
93L415FMQBRochester Electronics |
STANDARD SRAM, 1KX1, 70NS, TTL |
|
GD25Q64CSIGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
UPD44645364AF5-E33-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
DS1225AB-200IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |