English
简体中文
MOSFET N-CH 20V 200MA SC89-3
IC TRANSCEIVER FULL 1/1 16SSOP
IC EEPROM 2KBIT SPI SOT23-6
SENSOR 75PSI M10-1.0 6G .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-23-6 |
| 供应商设备包: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA025T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
TH58NVG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63BGA |
|
EM6HE16EWXD-10IHEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
71V256SA15PZGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
6116SA120TDBRochester Electronics |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
IS61LPS25636A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61DDP2B42M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
IS25WP128-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C1021B-15ZCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W25M512JVEIQWinbond Electronics Corporation |
IC FLSH 512MBIT SPI 104MHZ 8WSON |
|
CY14E101Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, CMOS, |
|
IS42S32200L-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
71024S15YGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |