类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23K640-E/PRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8DIP |
|
DS1230Y-85+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
93LC46A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
W25Q64JVTCIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
IS61WV51216EDALL-20BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
GS8128218GD-250IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
CY7C1313AV18-200BZCRochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
IS45S16800F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
CY7C1612KV18-250BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
24C02CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 100KHZ 8MSOP |
|
FM24C02ULZM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
EDB2432B4MA-1DAAT-F-R TRMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
TC58NVG1S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 67VFBGA |