类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HN58V256ATI12ERochester Electronics |
256K SERIAL EEPROM |
|
7140LA55CBRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
11LC040-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SINGLE WIRE 8DIP |
|
BR93H46RFJ-2CE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8SOPJ |
|
93AA86A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
SST39VF1602C-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
IS42VM32800K-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IS21ES08G-JCLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64GBIT EMMC 153VFBGA |
|
70V3569S5BF8Renesas Electronics America |
IC SRAM 576KBIT PAR 208CABGA |
|
S-24CS64A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 64KBIT I2C 8TSSOP |
|
IS61WV25616EDALL-20BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
28C64A-25B/UCRochester Electronics |
64K (8K X 8) CMOS EEPROM |
|
24LC16BH-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |