类型 | 描述 |
---|---|
系列: | GL-N |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8, 2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GS8182T18BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C199C-15ZXCTRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
W9812G2KB-6Winbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1472BV33-167BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT29F4G08ABADAH4-AITX:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
GS81302TT37GE-450IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
NM25C040NRochester Electronics |
EEPROM, 512X8, SERIAL PDIP8 |
|
71V016SA15PHIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
71V2556SA100BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S81600F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AS5F12G04SND-10LINAlliance Memory, Inc. |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
BR25H128F-2CE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 10MHZ 8SOP |
|
FT24C64A-ENR-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 1MHZ 8DFN |