类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1513KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
NM24C16LENRochester Electronics |
IC EEPROM 16KBIT I2C 100KHZ 8DIP |
|
X28C512EM-12Rochester Electronics |
EEPROM, 64KX8, 120NS, PARALLEL, |
|
S29GL128S90DHSS43Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY7C1512KV18-250BZXIRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
AS7C31024B-20TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
IS64LF12836EC-7.5B3LA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PAR 165TFBGA |
|
M95040-DFMC6TGSTMicroelectronics |
IC EEPROM 4KBIT SPI 8UFDFPN |
|
71256SA25YRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
S29GL512T12TFN010Rochester Electronics |
PARALLEL NOR MIRRORBIT FLASH, 51 |
|
AT25020B-MAHL-ERoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8UDFN |
|
7164S45DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
MR0A08BCYS35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 44TSOP2 |