English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT57W1MH18BF-4Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS PBGA165 |
|
CY7C1460AV25-167AXCTRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
SM671PED ADS TU115Silicon Motion |
FERRI-UFS 128GB 3D TLC + EXT. TE |
|
W25Q32JVSSIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CY7C1018CV33-12VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
GS8321Z36AGD-250IVGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
24LC04BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
24AA64-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
AS4C2M32SA-7TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
CY62147DV30LL-55BVITRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
CY27C010-120ZIRochester Electronics |
OTP ROM, 128KX8, 120NS PDSO32 |
|
IS42S32800G-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
MT25QU256ABA1EW9-0SIT TRMicron Technology |
IC FLASH 256MBIT SPI 8WPDFN |
