English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 183 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.3 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V016SA12BFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
CY7C148-35PCRochester Electronics |
IC SRAM 4KBIT PARALLEL 18DIP |
|
24LC16BT/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CY7C1366A-166BGCRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
70V3319S133BCGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
MT47H64M4BP-37E:B TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MT29F2G08ABAEAWP:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
24LCS52T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
BR25G640FJ-3GE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 20MHZ 8SOPJ |
|
FM16W08-SGRochester Electronics |
FRAM MEMORY, 8KX8 PDSO28 |
|
AS7C34098A-10JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY62168GE30-45BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AS7C256A-15JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
