类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPD44324185BF5-E40-FQ1Rochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MX25R6435FZAIL0Macronix |
IC FLASH 64MBIT SPI/QUAD 8USON |
|
25AA256XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8TSSOP |
|
FM25C160B-GCypress Semiconductor |
IC FRAM 16KBIT SPI 20MHZ 8SOIC |
|
S29GL256S10TFB010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
CY7C1021BV33-12VCTRochester Electronics |
STANDARD SRAM, 64KX16 |
|
93C46BXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
BR93G76FVM-3GTTRROHM Semiconductor |
IC EEPROM 8K SPI 3MHZ 8MSOP |
|
BR93G66FJ-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8SOPJ |
|
S25FL512SAGBHBA13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
BR95080-WMN6TPROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SO |
|
BR24G04FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 4K I2C 1MHZ 8TSSOP |
|
GD25Q16CWIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8WSON |