类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 1ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 4-XFBGA, WLCSP |
供应商设备包: | 4-WLCSP (0.75x0.75) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC76AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
STK11C88-SF25ITRFlip Electronics |
IC NVSRAM 256KBIT PAR 28SOIC |
|
CY62147G30-45ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 45NS, CM |
|
CY14V101LA-BA45XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
AS8C161831-QC166NAlliance Memory, Inc. |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
93AA66CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
MT28EW256ABA1HPC-0SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
63S281ANLRochester Electronics |
63S281 - OTP ROM, 256X8, 28NS |
|
71016S15YGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS61LF102436B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
71V67602S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S25FL032P0XMFI013Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
EDB1316BDBH-1DAAT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |