English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.173", 4.40mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24LC16B/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
BR93A86RFJ-WME2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
IS43DR82560C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29AL008J70TFN023Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT29F128G08CFABBWP-12IT:BMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
MT29F512G08EBHAFJ4-3T:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
SST25WF080B-40I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
AS7C4098A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
N25Q064A13EF8H0EAlliance Memory, Inc. |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
CY7C25652KV18-400BZIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
SST25VF512A-33-4C-SAERoving Networks / Microchip Technology |
IC FLASH 512KBIT SPI 33MHZ 8SOIC |
|
85C82-E/PRochester Electronics |
256 X 8 I2C/2-WIRE SERIAL EEPROM |
|
CY7C1009B-15VXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
