English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.5V ~ 3.6V |
| 工作温度: | -20°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C028V-20AXCFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
71V35761SA200BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY14MB064J1-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
SST39VF402C-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CY62157DV30L-55BVXERochester Electronics |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
71V65803S150BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1061GE-10BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
71V3556SA100BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S25FL256SDSBHV200Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
AT25SL128A-MHE-TAdesto Technologies |
IC FLSH 128MBIT SPI 104MHZ 8UDFN |
|
BR25H640FJ-2CE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 10MHZ 8SOPJ |
|
IS61WV51216BLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
93AA56T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
