类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 3.4 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF402C-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CY62157DV30L-55BVXERochester Electronics |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
71V65803S150BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1061GE-10BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
71V3556SA100BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S25FL256SDSBHV200Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
AT25SL128A-MHE-TAdesto Technologies |
IC FLSH 128MBIT SPI 104MHZ 8UDFN |
|
BR25H640FJ-2CE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 10MHZ 8SOPJ |
|
IS61WV51216BLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
93AA56T/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
71256S100DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
NM25C040LZEM8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
AS7C31025C-12JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |