类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA64F-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
93AA66A-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
CAT24C64WE-GT3Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
EM6GC16EWKG-10IHEtron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
25AA160CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
S29GL064N90FFI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT29F4G08ABBDAH4-IT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
CY62256VLL-70ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY7C1460KV25-200BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S29AL016J55TFIR10Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
TC58NYG1S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 67VFBGA |
|
AT24C128C-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
MT58L128L18PT-7.5Rochester Electronics |
CACHE SRAM, 128KX18, 4NS PQFP100 |