English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 18Mb (2M x 9) |
| 内存接口: | Parallel |
| 时钟频率: | 300 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL128P90FAIR10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT25DF041B-XMHN-BAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8TSSOP |
|
IS43TR16640CL-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
S29GL064N11FFIS33Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W632GG6NB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
71V256SA15YGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AS4C64M8D2-25BANAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AS6C2008-55STINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32STSOP |
|
IS61WV51216EDBLL-8BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
CY7C245-45PCRochester Electronics |
OTP ROM, 2KX8, 70NS |
|
IS25LP080D-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
AS7C32098A-10TCNTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
IS42S83200J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
