类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 512Kb (64K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021BN-15ZXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
FM25640B-GAFlip Electronics |
IC FRAM 64KBIT SPI 4MHZ 8SOIC |
|
IS66WVE4M16TBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
M24C02-FMN6TPSTMicroelectronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
MX25U1635FZNI-10GMacronix |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS64WV2568EDBLL-10BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 36TFBGA |
|
CY62128EV30LL-45SXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
CY62137FV30LL-45ZSXATRochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS43R16160D-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY7C008V-25ACRochester Electronics |
DUAL-PORT SRAM, 64KX8, 25NS |
|
CYDM128B16-55BVXIRochester Electronics |
IC SRAM 128KBIT PAR 100VFBGA |
|
MT58L64L36FT-7.5Rochester Electronics |
CACHE SRAM 64KX36 7.5NS PQFP100 |
|
FM25V02-GFlip Electronics |
IC FRAM 256KBIT SPI 40MHZ 8SOIC |