类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS2030Y-70#Rochester Electronics |
IC NVSRAM 256KBIT PAR 256BGA |
|
CY62157EV30LL-45ZXITRochester Electronics |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
W25Q257JVFIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT45DB081E-MHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8UDFN |
|
AS7C1024B-20TJINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT25040B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
IS43LD32640B-25BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
SST39VF1682-70-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AS4C32M16D3-12BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 96FBGA |
|
GS82582T37GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
FEMC008GTTG7-T14-16Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
FM24CL16B-GRochester Electronics |
IC FRAM 16KBIT I2C 1MHZ 8SOIC |
|
71256L25YGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |