类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1512V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
24FC256T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8MSOP |
|
7164S55TDBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
MT53E128M32D2DS-046 AUT:A TRMicron Technology |
IC DRAM 4GBIT 2.133GHZ 200WFBGA |
|
S29GL256S10TFIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
11LC161-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
|
S26KS512SDPBHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
71V67602S150PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71T75802S133PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
M95080-DRMN8TP/KSTMicroelectronics |
IC EEPROM 8KBIT SPI 20MHZ 8SO |
|
TE28F160B3BA110SRochester Electronics |
16M-BIT FLASH MEM, PARALLEL |
|
24AA32AF-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
7164S100DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |