类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.600", 15.24mm) |
供应商设备包: | 28-CerDip |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY15E004J-SXETCypress Semiconductor |
IC FRAM 4KBIT I2C 3.4MHZ 8SOIC |
|
DS1249AB-100Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
AT25DN512C-SSHF-BAdesto Technologies |
IC FLASH 512KBIT SPI 8SOIC |
|
MX25L1633EZUI-10GMacronix |
IC FLASH 16MBIT SPI 104MHZ 8USON |
|
24LC014HT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
S25FL512SAGBHIT10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
MR256A08BCYS35Everspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |
|
CY7C1357C-100AXCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
DS1220AD-200+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
MT47H128M4BT-37E:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 92FBGA |
|
CY7C1019CV33-12ZCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
0436A41QLAB-5Rochester Electronics |
4MBIT (128K X 36) SRAM |
|
IS43R32400E-4BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |