







MOSFET N-CH 80V 120A TO263
CONN SPLICE 400MCM CRIMP AMPOWER
IC SRAM 4.5MBIT PARALLEL 100TQFP
RF-TR 10V 30MA FT=8G NPN
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | 4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
93C56B-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
|
AT27LV010A-70JU-TRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
|
DS1230AB-85Rochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
|
24VL014H/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
|
CAT24C64LIRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8DIP |
|
|
GD25Q127CWIGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
|
IS43R16160D-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
|
GVT71128D32T-7TRochester Electronics |
IC SRAM 4MBIT 66MHZ |
|
|
24LC025T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
|
CY7C1061DV33-10ZSXIFlip Electronics |
IC SRAM 16MBIT PAR 54TSOP II |
|
|
NM93C66LEM8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
|
FT24C02A-USR-BFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8SOP |
|
|
CYATB108LD-ZS45XIRochester Electronics |
IC NVSRAM 8MBIT PAR 44TSOP II |