类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 16Mb (2M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 3ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F8G16ADBDAH4-AIT:DMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
S29GL256P90FAIR23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
BR25H040FJ-2CE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 10MHZ 8SOPJ |
|
S25FL128SDPMFIG00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AT45DB641E-UUN2B-TAdesto Technologies |
IC FLSH 64MBIT SPI 85MHZ 44WLCSP |
|
CY62167G18-55ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
CY7C1440AV25-250BZXIRochester Electronics |
CACHE SRAM, 1MX36, 2.6NS PBGA165 |
|
IS43R86400D-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MB85R256FPNF-G-JNERE2Fujitsu Electronics America, Inc. |
IC FRAM 256KBIT PARALLEL 28SOP |
|
DS1249Y-70IND#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
GD25Q64CWIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S29AS016J70BHI042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
W631GG8MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |