类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8, 256 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29VS064RABBHI000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
|
AS7C4096A-20TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
70T651S15BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
7130LA25JGI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
24AA01-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
70V7339S166BCIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
IS43LD32640B-18BPLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
CY7C1373BV25-117ACRochester Electronics |
ZBT SRAM, 1MX18, 7.5NS |
|
93AA66C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
SM662GXA BDS ST617Silicon Motion |
FERRI EMMC 5GB 3D TLC [PSEUDO-SL |
|
MX29GL128FLXFI-90GMacronix |
IC FLSH 128MBIT PARALLEL 64LFBGA |
|
GS88036CGT-300IGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS7C316098A-10BINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |