STANDARD SRAM, 64KX16, 15NS PDSO
IC SRAM 16KBIT PARALLEL 52PLCC
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1020BN-12VXCRochester Electronics |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
FEMC004GTTG7-T13-16Flexxon |
IC FLASH 32GBIT EMMC 100FBGA |
|
BR93L66RFJ-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SOPJ |
|
W25Q32JVTBIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
S29GL01GS10FHSS13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
HM6-6642/883Rochester Electronics |
512 X 8 CMOS PROM |
|
BR25S640FJ-WE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 20MHZ 8SOPJ |
|
S25FS512SDSBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
IS43DR16160B-37CBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
BR24G08FVT-3AGE2ROHM Semiconductor |
IC EEPROM 8K I2C 1MHZ 8TSSOP |
|
CYD18S72V-133BBCRochester Electronics |
IC SRAM 18MBIT PARALLEL 484FBGA |
|
7005L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
FM93C06ENRochester Electronics |
IC EEPROM 256B SPI 1MHZ 8DIP |