类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 266 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 500 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24G08FVT-3AGE2ROHM Semiconductor |
IC EEPROM 8K I2C 1MHZ 8TSSOP |
|
CYD18S72V-133BBCRochester Electronics |
IC SRAM 18MBIT PARALLEL 484FBGA |
|
7005L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
FM93C06ENRochester Electronics |
IC EEPROM 256B SPI 1MHZ 8DIP |
|
NSEC00K016-ITInsignis Technology Corporation |
IC FLASH 128GBIT EMMC 100BGA |
|
S29GL512T11TFB010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S25FL128SAGBHN203Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
BR93H66RFVM-WCTRROHM Semiconductor |
IC EEPROM 4KBIT SPI 8MSOP |
|
BR35H128F-WCE2ROHM Semiconductor |
IC EEPROM 128K SPI 5MHZ 8SOP |
|
25LC020AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TDFN |
|
25AA040A-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
IS43TR16128C-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
71256SA15PZGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |