English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25L040FVM-WTRROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8MSOP |
|
23K256-I/PRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8DIP |
|
S25FL512SAGBHAC13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
24AA08HT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
AM27S07-15PCRochester Electronics |
STANDARD SRAM, 16X4, 15NS |
|
CY7C1518KV18-333BZXIRochester Electronics |
DDR SRAM, 4MX18, 0.45NS PBGA165 |
|
IS64LF12836EC-7.5B3LA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PAR 165TFBGA |
|
25LC010A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8MSOP |
|
FM24CL64B-DGTRCypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8TDFN |
|
24LC08BT/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
25C080-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
71V67603S150PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
BR93G86FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 16K SPI 3MHZ 8TSSOP |
