类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1523AV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S29GL128P11FFIV23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AS4C16M16SA-7TCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29AL008J70BFN020Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
71V65703S85PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT24C16WE-GT3Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
AS7C4096A-12TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
SST39SF010A-55-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT29F8G08ADAFAWP-AAT:F TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
S29GL512S10FHSS23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
CY7C1361A-100AJCRochester Electronics |
STANDARD SRAM, 256KX36 |
|
EDB1332BDBH-1DAUT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
S71VS128RC0AHK4L0Rochester Electronics |
MEMORY CIRCUIT, FLASH+PSRAM, 2MX |