English
简体中文
SLEEVE, 0.5 IN DIA X 1.5 IN W
IC EEPROM 16KBIT I2C 8SOIC
IC FLASH 1MBIT PARALLEL 32PLCC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SST39 MPF™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20µs |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F8G08ADAFAWP-AAT:F TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
S29GL512S10FHSS23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
CY7C1361A-100AJCRochester Electronics |
STANDARD SRAM, 256KX36 |
|
EDB1332BDBH-1DAUT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
S71VS128RC0AHK4L0Rochester Electronics |
MEMORY CIRCUIT, FLASH+PSRAM, 2MX |
|
70T651S12BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
CY7C1370B-133BGCRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
W971GG8SS-25 TRWinbond Electronics Corporation |
IC DRAM 1GBIT SSTL 18 60WBGA |
|
71T75602S100BGRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS42SM16160K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CAT28LV64H13-20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
GS82582Q19GE-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
71V3559S80PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |