English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14E101J2-SXITCypress Semiconductor |
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
71V2576S150PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V3557S80BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
R1LP0408CSC-5SC#D0Rochester Electronics |
STANDARD SRAM, 512KX8, 55NS |
|
MX25V2033FZUIMacronix |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |
|
25AA020A-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8DIP |
|
71V67703S75BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CAT25256XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8SOIC |
|
SST26VF016B-80E/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S29NS512P0SBJW000Rochester Electronics |
FLASH, 32MX16, 80NS, PBGA64 |
|
S29GL01GT12TFVV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AS4C16M16D1A-5TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
S29NS512P0PBJW003Rochester Electronics |
FLASH, 32MX16, 80NS, PBGA64 |
