类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-TSSOP-BJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V321S35JRochester Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS61LF102418B-6.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
M24C04-WDW6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
S25FL064LABMFA003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY7C1012DV33-10BGXIRochester Electronics |
STANDARD SRAM, 512KX24, 10NS PBG |
|
71V3557S80BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AS4C2M32S-7BCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W25Q128JWSIM TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
UPD44325084BF5-E33-FQ1Rochester Electronics |
QDR SRAM, 4MX8, 0.45NS |
|
70V9279L7PRFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
70V659S12BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
MT29F2G08ABBGAH4-IT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V424L15YGRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |