English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.6V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
| 供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V3579S5BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
MT58L1MY18FT-6.8Rochester Electronics |
CACHE SRAM, 1MX18, 6.8NS, CMOS, |
|
7024L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
AT45DB641E-MHN-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 8UDFN |
|
CY27H512-45JCRochester Electronics |
OTP ROM, 64KX8, 45NS PQCC32 |
|
71V3576S150PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
GD25VQ40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
S29GL512T11DHV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
GVT71128E36T-8Rochester Electronics |
IC SRAM 4MBIT 100MHZ |
|
S29GL064N90TFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
IS43LR32160B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
BR25L080FV-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SSOPB |
|
25AA640A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
