类型 | 描述 |
---|---|
系列: | MX29GL |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA, CSPBGA |
供应商设备包: | 64-LFBGA, CSP (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C1024B-12JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1470BV25-250AXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
70125L25JGRenesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
BR24L04NUX-WTRROHM Semiconductor |
IC EEPROM 4KBIT I2C VSON008X2030 |
|
CAT25160HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 10MHZ 8UDFN |
|
CAT24C256WI-GRochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IS43R32160D-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 144LFBGA |
|
47C16T-E/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
FM25V20A-DGQTRCypress Semiconductor |
IC FRAM 2MBIT SPI 40MHZ 8TDFN |
|
CAT24C08LIRochester Electronics |
CAT24C08 - 8-KBIT I2C SERIAL EEP |
|
IS46R16160F-6TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
TH58BVG2S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT 63TFBGA |
|
24AA64T-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |