English
简体中文
IC SRAM 9MBIT PARALLEL 165CABGA
LCD COG GRAPH 128X32 NO REFL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F512G08EEHAFJ4-3R:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
BR95160-WMN6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SO |
|
93C56C-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
SST38VF6404-90-5I-B3KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
MT53E768M32D4DT-053 AIT:E TRMicron Technology |
IC DRAM 24GBIT 1.866GHZ 200VFBGA |
|
IS61C6416AL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
25LC080C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
AT24C256C-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
041841QLAD-5Rochester Electronics |
256KX18 SRAM |
|
STK14C88-5K45MRochester Electronics |
32KX8 NON-VOLATILE SRAM, 45NS, C |
|
71V67703S80BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71V416S12YRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
UPD46184182BF1-E40-EQ1Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |