English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC080C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
AT24C256C-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
041841QLAD-5Rochester Electronics |
256KX18 SRAM |
|
STK14C88-5K45MRochester Electronics |
32KX8 NON-VOLATILE SRAM, 45NS, C |
|
71V67703S80BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71V416S12YRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
UPD46184182BF1-E40-EQ1Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
UPD44325362BF5-E33-FQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
MX30LF4G28AB-TIMacronix |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
71V65603S133BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS43LR16400C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 60TFBGA |
|
STK12C68-5C35MFlip Electronics |
IC NVSRAM 64KBIT PARALLEL 28CDIP |
|
CY7C1663KV18-450BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
