类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.300", 7.62mm) |
供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1663KV18-450BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
IS45S16400J-6CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
S25FL128SAGMFA003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MX66L1G85GXDI-10GMacronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
BR93L66RFVM-WTRROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
CY14B256I-SFXITRochester Electronics |
IC NVSRAM 256KBIT I2C 16SOIC |
|
S29GL512S11FAIV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
S25HL512TDPNHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
GS864036GT-300IGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
S25FL164K0XMFB013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
24AA256T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |
|
MTFC16GAPALBH-IT TRMicron Technology |
IC FLASH 128GBIT MMC 153TFBGA |
|
MT55V512V36PF-7.5Rochester Electronics |
ZBT SRAM, 512KX36, 4.2NS PBGA165 |