类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 8Mb (1M x 8) |
内存接口: | SPI |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | 10µs |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32JWZPIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
71V546S133PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24LC024HT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8MSOP |
|
BR95160-RMN6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SO |
|
CY7C1380S-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
BR93A86RFVT-WME2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOPB |
|
IS42S86400F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V67803S133PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S26KS512SDABHV030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CAV25020YE-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
CY7C1339G-133AXCCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS62WV5128BLL-55QLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32SOP |
|
MT58L512L18FS-8.5Rochester Electronics |
CACHE SRAM, 512KX18, 8.5NS PQFP1 |