English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14B104N-BA25XCRochester Electronics |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
S29GL512T11DHV010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
BR25S640FVT-WE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 8TSSOPB |
|
S27KL0641DABHI020Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
FM24C17ULEM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
IS43TR16256BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
LE25FU406CMA-TLM-HRochester Electronics |
4M BIT (512K X 8) SERIAL FLASH M |
|
IS25WP080D-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
AT24CS04-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
CAT25160LI-GRochester Electronics |
IC EEPROM 16KBIT SPI 20MHZ 8DIP |
|
23LC512-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
BR25H020FJ-2CE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 10MHZ 8SOPJ |
|
IS43TR16640CL-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
