类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24C02CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 100KHZ 8TDFN |
|
70T3539MS133BCIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
GD25LQ80CTIGRGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
QS8888-20PRochester Electronics |
CACHE TAG SRAM, 16KX4, 19NS |
|
71V67803S133BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS4C64M16MD1A-5BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
CAT25512VE-GT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
CY14U256LA-BA35XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48FBGA |
|
70T3319S166BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
MT29F1G08ABAFAWP-ITE:F TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
S27KL0641DABHB030Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
CY15B104QN-50LPXICypress Semiconductor |
IC FRAM 4MBIT SPI 50MHZ 8GQFN |
|
NM24C65ULEM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |