类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GS82582D38GE-550IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
CY7C261-45QMBRochester Electronics |
UVPROM, 8KX8, 45NS, CMOS, CQCC28 |
|
MX66UM1G45GXDI00Macronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
CY7C1315CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
25AA256-E/PRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DIP |
|
MX68GL1G0FUT2I-12GMacronix |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
24LC025T-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
UPD431000AGZ-70X-KJH-ARochester Electronics |
STANDARD SRAM, 128KX8, 70NS |
|
70T3539MS166BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
25AA512T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIJ |
|
CAV25040VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
AT25DF641A-SH-TAdesto Technologies |
IC FLASH 64MBIT SPI 100MHZ 8SOIC |
|
24VL024HT/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |