类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.6 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA512T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIJ |
|
CAV25040VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
AT25DF641A-SH-TAdesto Technologies |
IC FLASH 64MBIT SPI 100MHZ 8SOIC |
|
24VL024HT/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
CAT24C03WI-G-CSRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
LE24C322M-TLM-ERochester Electronics |
IC EEPROM 32KBIT I2C 400KHZ 8MFP |
|
S29GL064N90TFI033Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY14B104NA-ZS45XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
LE24CBK23MC-AHSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8SOPJ |
|
IS42VM32200M-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
HYB25D512800CE-5 |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V65603S133BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
34LC02-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |