类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 34-LPM |
供应商设备包: | 34-LPM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1520AV18-200BZIRochester Electronics |
DDR SRAM, 2MX36, 0.45NS |
|
AT93C46E-PURoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
CY62128BLL-55ZRITRochester Electronics |
STANDARD SRAM, 128KX8 |
|
23K256-I/STRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8TSSOP |
|
CY7C1463AV33-133AXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
FT24C08A-USG-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8SOP |
|
N24C64UVTGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ US8 |
|
71V67703S85BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CYD01S18V-167BBCRochester Electronics |
DUAL-PORT SRAM, 64KX18, 4NS |
|
AS7C513B-12TCNAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44TSOP2 |
|
CY7C1049BL-20VCRochester Electronics |
STANDARD SRAM, 512KX8, 20NS |
|
71V65903S80PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
34AA04T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TDFN |