类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V65903S80PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
34AA04T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TDFN |
|
CY7C1472BV25-200AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
CY7C09579V-83BBCRochester Electronics |
DUAL-PORT SRAM, 32KX36, 18NS PBG |
|
CY7C1412KV18-250BZCRochester Electronics |
QDR SRAM, 2MX18, 0.45NS, CMOS, P |
|
IS43R16320F-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
S29GL512S10FHSS20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
24FC01-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
71V67903S80BQIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1363A-133AJCRochester Electronics |
STANDARD SRAM, 512KX18, 7NS |
|
AT25SF081-SHF-BAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
UPD44165362BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
CY7C2644KV18-333BZIRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |