English
简体中文
BOX STEEL GRAY 24.02"L X 24.02"W
IC DRAM 512MBIT PAR 66TSOP II
IC RF TXRX+MCU 802.15.4 32VFQFN
IC FLASH 16MBIT PARALLEL 48TSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL512S10FHSS20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
24FC01-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
71V67903S80BQIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1363A-133AJCRochester Electronics |
STANDARD SRAM, 512KX18, 7NS |
|
AT25SF081-SHF-BAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
UPD44165362BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
CY7C2644KV18-333BZIRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
S29GL512T11TFV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT29F8G08ABACAWP-AIT:CMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
SST26VF032B-104V/SMRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
|
AT27C010-70PURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
|
FM24C04ULM8Rochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
CY7C1518V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |