English
简体中文
CRYSTAL 13.52127MHZ 10PF SMD
MEMS OSC XO 133.0000MHZ LVPECL
IC BATT PROT LI-ION 1-4CL 8TMSOP
IC EPROM 1MBIT PARALLEL 32DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM24C04ULM8Rochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
CY7C1518V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70V659S12DRIFlip Electronics |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
IS42S32400F-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
MT29F4G08ABBDAH4:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
CY62157CV18LL-70BAITRochester Electronics |
SRAM 8MB 512K X 16 |
|
CY7C1360C-200AJXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1019CV33-10ZXCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
IS45S16400J-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
71V3577S75BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1513KV18-300BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
S29JL032H70TFI220Rochester Electronics |
FLASH, 2MX16, 70NS, PDSO48 |
|
71T75802S133BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |