类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 15ms |
访问时间: | 3.5 µs |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1518V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70V659S12DRIFlip Electronics |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
IS42S32400F-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
MT29F4G08ABBDAH4:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
CY62157CV18LL-70BAITRochester Electronics |
SRAM 8MB 512K X 16 |
|
CY7C1360C-200AJXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1019CV33-10ZXCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
IS45S16400J-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
71V3577S75BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1513KV18-300BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
S29JL032H70TFI220Rochester Electronics |
FLASH, 2MX16, 70NS, PDSO48 |
|
71T75802S133BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
70V3589S133BF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |