English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62256-70SNCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
24C01CT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-6 |
|
70V3599S166BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CY7S1049G30-10VXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CAT25C128VIRochester Electronics |
IC EEPROM 128KBIT SPI 5MHZ 8SOIC |
|
CY7C1565V18-375BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
DS1225AB-150Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
RMLV0408EGSP-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32SOP |
|
S29GL256P90TFCR13Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
24AA02-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
CY7C1414KV18-300BZXIRochester Electronics |
QDR SRAM, 1MX36, 0.45NS PBGA165 |
|
CAT24C04YI-GT3JNRochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
CY7C1415SV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
