类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA52-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
MTFC8GAKAJCN-1M WT TRMicron Technology |
IC FLASH 64GBIT MMC 153VFBGA |
|
71V3556SA133BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24CS02-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |
|
93C56BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
11LC080-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8SOIC |
|
S29GL064N11TFIV23Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
CY62146GE-45ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 45NS, CM |
|
CY7C1399B-12VCTRochester Electronics |
CACHE SRAM, 32KX8, 12NS PDSO28 |
|
25LC010A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
IS42S32800J-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AS4C2M32D1A-5BINAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144LFBGA |
|
AT45DB161E-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8SOIC |