STANDARD SRAM, 256KX16, 45NS, CM
CAP CER 0.82PF 100V NP0 0402
类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1399B-12VCTRochester Electronics |
CACHE SRAM, 32KX8, 12NS PDSO28 |
|
25LC010A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
IS42S32800J-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AS4C2M32D1A-5BINAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 144LFBGA |
|
AT45DB161E-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8SOIC |
|
CAT25256YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8TSSOP |
|
NM93C66LZM8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
ACE1501EMT8Rochester Electronics |
8-BIT, EEPROM, ACE1502 CPU |
|
BR24S16NUX-WTRROHM Semiconductor |
IC EEPROM 16K I2C VSON008X2030 |
|
70V3589S166BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
CY62136VLL-55BAITRochester Electronics |
STANDARD SRAM, 128KX16 |
|
MX66L1G55GXDI-10GMacronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
IS45S16320F-7CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |